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New fabrication method for di-indium tri-sulfuric (In2S3) thin films

Article scientifique 2022 Anglais

Résumé

Abstract Di-indium tri-sulfuric (In2S3) thin films are fabricated with annealing indium thin films in a sulfur environment. The effect of both annealing temperature and pressure on the structure, morphology, Raman, and photoluminescence (PL) spectroscopy has been studied. The X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) of the prepared thin films showed different structural phases and morphology with varying annealing temperature and pressure. Energy dispersive X-ray (EDX) analysis confirmed the chemical composition and the atomic ratio of In/S for the In2S3 thin films. The optimum annealing conditions of In2S3 thin films are 550 °C and 100 Torr. The outcome results revealed a new good growth method for In2S3 thin films to be used for different applications.

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Ali, A., Ibrahim, M., Hassen, A. (2022). New fabrication method for di-indium tri-sulfuric (In2S3) thin films. https://doi.org/10.1038/s41598-022-11107-w

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Ahmed I. Ali Medhat Ibrahim A. Hassen

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