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Impact of Indium concentration In0.52 Al0.48 As/Inx Ga1-x As/InP HEMT device on DC and AC performances

Article scientifique 2022 Anglais

Résumé

Abstract The main goal of this paper is to Investigate the Impact of Indium concentration In the alloy InxGa1-xAs of the channel layer .the stimulation device based on In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As In (HEMT )by using Silvaco Tacad two and three-dimensional device simulation.For each Indium concentration (In)In the alloy InxGa1-xAs some DCand ACperformances has been simulated In order to show the Influence of the Indium content .which 20 nm of gate length and thickness of 10nm of channel layer the device exhibit a maximum drain current 1.43 A for In0.1Ga0.9As,a maximum transconductance (Gm) of 1450 mS/mm ,a subthreshold voltage slope (SS)of 75 mV/decade,a gate leakage current of 10 − 5,cut-off frequency (Ft) of 400GHZ and maximum oscillation frequency (Fmax) of 860 GHz

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boursali, a., Bouazza, A. (2022). Impact of Indium concentration In0.52 Al0.48 As/Inx Ga1-x As/InP HEMT device on DC and AC performances. https://doi.org/10.21203/rs.3.rs-1707491/v1

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amin boursali A. Guen Bouazza

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