RF Power Amplifier for the Non-standard Frequency Band and Its Practical Implementation

Résumé

This paper presents the design, development, and practical implementation of a Radio Frequency (RF) Power Amplifier (PA) optimized for a nonstandard frequency band of 720–760 MHz, intended for specialized broadcasting and communication applications. The amplifier was based on a Class AB topology, employing a laterally diffused metal–oxide semiconductor (LDMOS) transistor due to its high efficiency and linearity at sub-gigahertz frequencies. Simulation results obtained using ADS (Advanced Design System) predicted a small-signal gain of 18.7 dB, output power of 48.5 dBm (≈70 W) at a 1 dB compression point and a peak drain efficiency of 72.3%. The prototype was fabricated on a FR-4 substrate (εr = 4.4, thickness = 1.6 mm) with microstrip matching networks to achieve broadband performance across the target band. Experimental measurements demonstrated close agreement with simulations, yielding a measured gain of 18.1 dB, output power of 47.9 dBm, and a power-added efficiency (PAE) of 70.6% at 740 MHz. The amplifier maintained stable operation with a VSWR tolerance of up to 3:1 and harmonic suppression better than −42 dBc, meeting ITU spectral mask requirements. The successful realization of this RF power amplifier highlights its suitability for nonstandard frequency allocation scenarios, including emergency communications, experimental broadcasting, and defense-related RF systems

Citer ce document

Accès au document

Texte intégral en lecture en ligne, réservé aux abonnés SPHAERO et aux membres de l'institution. Se connecter

Voir l'article sur le site de la revue

Auteur(s)

Statistiques

Consultations : 1

Téléchargements : 0