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Performance analysis of III-nitride materials based biosensors for detection of albumin protein

Article scientifique 2023 Anglais

Résumé

In this work, AlGaN metal-oxide-semiconductor highelectron-mobility transistor (MOS-HEMT) based biosensor has been presented for detecting the albumin protein.The simulation results of the sensitivity parameters used to detect albumin protein such as drain current, transconductance, output conductance, gate-todrain capacitance, and sensitivity have been obtained with atlas-technology computer aided design (Atlas-TCAD).The AlGaN/GaN MOS-HEMT device is optimized, in require to improve the biosensor sensitivity.The sensitivity obtained is 55.81%.

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Bouguenna, A., Driss, B., Amine, B. (2023). Performance analysis of III-nitride materials based biosensors for detection of albumin protein. https://doi.org/10.54985/peeref.2306p3863264

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Auteur(s)

Abdellah Bouguenna Bouguenna Driss Boudghene Stambouli Amine

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