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Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative Approach

Article scientifique 2016 Anglais

Résumé

Silicon nanowires fabricated by metal-assisted chemical etching can present low porosity and a rough surface depending on the doping level of the original silicon wafer. In this case, wiring of silicon nanowires may represent a challenging task. We investigated two different approaches to realize the electrical contacts in order to enable electrical measurement on a rough silicon nanowire device: we compared FIB-assisted platinum deposition for the fabrication of electrical contact with EBL technique.

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D’Ortenzi, L., Monsù, R., Cara, E., Fretto, M., Kara, S., Rezvani, S., Boarino, L. (2016). Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative Approach. https://doi.org/10.1186/s11671-016-1689-x

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Auteur(s)

L. D’Ortenzi R. Monsù Eleonora Cara Matteo Fretto S. Kara S.J. Rezvani Luca Boarino

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