Accès ouvert

Conduction and Resistive Switching Memory in Al/MoS2+PVP/Ag Devices Fabricated using Drop cast Method

Article scientifique 2021 Anglais

Résumé

Abstract Resistive switching in MoS2 embedded PVP composite-based ReRAM with Al and Ag electrodes is reported. A cost-free drop cast method was used to deposit active layers consisting of 30 wt%, 40 wt%, and 70 wt% of MoS2 in PVP. Each system exhibited unique electroforming and switching mode. Asymmetrical bipolar resistive switching occurring only in the positive voltage bias, a typical bipolar resistive switching and a typical ‘O-type’ resistive switching were observed for the 30 wt%, 40 wt%, and 70 wt% systems, respectively. Furthermore, injection of charge carriers at the electrode/active layer interface and electrochemical metalization mechanisms drove the formation of a nanoscale conductive filament in the device A and B. On the other hand, we attributed the conduction mechanism of device C to hopping conduction. Our results demonstrate the behaviour of MoS2 embedded PVP composite-based ReRAM has a strong dependence on the amount of MoS2 and that both the switching and conduction mechanism can be exploited by controlling the amount of MoS2 in the composite.

Citer ce document

Dlamini, Z., Vallabhapurapu, S., Mahule, T., Wu, S., Vallabhapur, V. (2021). Conduction and Resistive Switching Memory in Al/MoS2+PVP/Ag Devices Fabricated using Drop cast Method. https://doi.org/10.21203/rs.3.rs-956321/v1

Accès au document

Voir sur le dépôt source

Ce document est hébergé sur son dépôt institutionnel d'origine.

Auteur(s)

Zolile Wiseman Dlamini Sreedevi Vallabhapurapu Tebogo Sfiso Mahule Shuying Wu Vijaya Srinivasu Vallabhapur

Statistiques

Consultations : 1

Téléchargements : 0