Ferroelectric Properties Study of Si 0.5 Sn 0.5 ZnO 3 Thin Films Deposited by PLD Technique

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Abstract Si0.5Sn0.5ZnO3 thin films deposited on two different substrates (STO) and (MgO) using pulsed laser deposition technique. The current study aims to explore both effects of Si-doped in SnZnO3 and the rule of the SrTiO3 (STO) buffer layer in the adjustment of the ferroelectricity of the grown samples. Structure, morphology, uniformity, thickness, and the crack-free film growth are confirmed using X-Ray diffraction, atomic force microscopy (AFM) and scanning electron microscopy (SEM). Both resistivity and carriers’s mobility of Si0.5Sn0.5ZnO3 film’s values are 3.22×103, 7.35×107 Ω−1.m− 1 (semiconductor) and 4.31×103, 63.1 m/(V⋅s) (insulator) on MgO and STO substrates, respectively. The P-E loops show Lossy capacitor response and Non-linear ferroelectric response for MgO, and STO substrates, respectively. Furthermore, the ferroelectricity parameters of the Si0.5Sn0.5ZnO3 films deposited on the SrTiO3 layer are improved orders of magnitude compared to the thin film on the MgO substrate to be suitable for Ferroelectric RAM applications.

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