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A Novel Analytical Model of Ballistic 1-D Schottky Barrier GAA CNTFET Including BTBT Effect

Article scientifique 2023 Anglais

Résumé

Abstract In this work a novel analytical model for carbon nanotube transistor (CNTFET) including band to band tunneling (BTBT) effect has been proposed. Consequently, outstanding routes for the design and simulation of ultra-scaled down circuits have become available. Basically, this model has been established on solving analytically the current Landauer integral. Such a solution has been obtained via a set of approximations for Fermi-Dirac distribution function, Wentzel– Kramers–Brillouin (WKB) transmission probability and band to band tunneling probability. In this regard, the suggested approach has been applied to model one dimensional (1-D) Schottky barrier Gate all around (GAA) CNTFET. The introduced model shows a high degree of closure to the experimental data represented in an error of 4.5% for the on current, 1.6% for the threshold voltage and 1.35% for the drain induced barrier lowering (DIBL). The resultant of this effort is reflected in merging of both the accuracy and the speed of the circuit simulator.

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Abdalla, I., Matter, F., El-Mokadem, E., Hamed, H., Afifi, A. (2023). A Novel Analytical Model of Ballistic 1-D Schottky Barrier GAA CNTFET Including BTBT Effect. https://doi.org/10.21203/rs.3.rs-3279855/v1

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Auteur(s)

Ibrahim L. Abdalla Fatma A. Matter Eslam Samy El-Mokadem Hesham F. A. Hamed Ahmed. A. Afifi

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